Electron mobility in p-GaAs by time of flight

Journal Article · Mon Sep 07 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98864· OSTI ID:6166926

Ahrenkiel, R K; Dunlavy, D J; Greenberg, D; Schlupmann, J; Hamaker, H C; MacMillan, H F

The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1 x 10 X and 2 x 10 Y cm T were investigated. The measured mobilities were about 2900 and 1300 cmS/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• OSTI ID: 6166926
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
DATA
DEPOSITION
DIFFUSION
ELECTRON MOBILITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
MOBILITY
NUMERICAL DATA
PARTICLE MOBILITY
PNICTIDES
RADIATION TRANSPORT
SCATTERING
SURFACE COATING