Deep levels in {ital p}-type InGaAsN lattice matched to GaAs
- Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210-1272 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal{endash}organic chemical vapor deposition-grown, unintentionally doped {ital p}-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E{sub v}+0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5{times}10{sup 14}, 3.8{times}10{sup 14}, and 8.2{times}10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4{times}10{sup 14}cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 348232
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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