Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Electron and hole transport in compensated InGaAsN ({approx_equal}2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20217004
- Journal Information:
- Applied Physics Letters, Vol. 77, Issue 3; Other Information: PBD: 17 Jul 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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