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CuPt-B ordered microstructures in GaInP and GaInAs films

Conference ·
The authors examine CuPt-B atomic sublattice ordering in Ga{sub 0.51}In{sub 0.49}P (GaInP) and Ga{sub 0.47}In{sub 0.53}As (GaInAs) III-V alloy films grown by atmospheric- and low-pressure metalorganic chemical vapor deposition on singular and vicinal (001) substrates. The influences of growth conditions and substrate miscut on double- and single-variant ordered microstructures are investigated using transmission electron microscopy (TEM). Relatively thick (>1-2 {micro}m) double-variant ordered GaInP and GaInAs films show complementary superdomain formation. Single-variant ordered films on <111>B-miscut substrates contain single-phase domains, separated by antiphase boundaries (APBs). The appearance of APBs in TEM dark-field images is anticipated from electron diffraction theory.
Research Organization:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99GO10337
OSTI ID:
754737
Report Number(s):
NREL/CP-520-27699
Country of Publication:
United States
Language:
English