Atomic ordering and temperature-dependent transient photoconductivity in Ga{sub 0.47}In{sub 0.53}As
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Influences of CuPt{sub B} atomic ordering on transient photoconductivity in epitaxial Ga{sub 0.47}In{sub 0.53}As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30{endash}60 {mu}s, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double- and single-variant samples may be influenced by inhibited transport across antiphase boundaries. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 341354
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 74; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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