Carrier transport in ordered and disordered In{sub 0.53}Ga{sub 0.47}As

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118214· OSTI ID:450207

Ahrenkiel, R K; Ahrenkiel, S P; Arent, D J; Olson, J M ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In{sub 0.53}Ga{sub 0.47}As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley{endash}Read{endash}Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 450207
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER LIFETIME
CHEMICAL VAPOR DEPOSITION
ELECTRON DIFFRACTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTOCONDUCTIVITY
RECOMBINATION