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Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2126110· OSTI ID:20706459
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  1. Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris XI, 91405 Orsay cedex (France)
We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
OSTI ID:
20706459
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English