Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m
- Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris XI, 91405 Orsay cedex (France)
We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
- OSTI ID:
- 20706459
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 19; Other Information: DOI: 10.1063/1.2126110; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In{sub 0.53}Ga{sub 0.47}As at 1.55 {mu}m wavelengths
Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation