Terahertz generation and power limits in In{sub 0.53}Ga{sub 0.47}As photomixer coupled to transverse-electromagnetic-horn antenna driven at 1.55 {mu}m wavelengths

Journal Article · Mon Oct 18 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3505341· OSTI ID:21464523

Mangeney, J; Meng, F; Gacemi, D ^[1]; Peytavit, E; Lampin, J F; Akalin, T ^[2]

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1. IEF, UMR CNRS 8622, Universites Paris-Sud, 91405 Orsay Cedex (France)
2. UMR CNRS 8520, IEMN, Cite Scientifique, 59652 Villeneuve d'Ascq Cedex (France)

We report continuous wave generation at frequencies up to 2 THz using ion-irradiated In{sub 0.53}Ga{sub 0.47}As photomixers coupled to transverse-electromagnetic-horn antennae driven at {approx}1.55 {mu}m wavelength. Output powers up to 0.1 {mu}W at 700 GHz have been achieved. The dependence of the output power on incident optical power and the bias voltage is analyzed in the both regimes of Ohmic transport and recombination-limited transport. The fundamental limitations of the performance of the photomixer devices based on photoconductive phenomenon in recombination-limited transport are analyzed.

• OSTI ID: 21464523
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTENNAS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
IONS
MATERIALS
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SEMICONDUCTOR MATERIALS
WAVELENGTHS