Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
- Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and In{sub x}Ga{sub 1–} {sub x}As with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in In{sub x}Ga{sub 1–} {sub x}As exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of In{sub x}Ga{sub 1–} {sub x}As at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In{sub 0.38}Ga{sub 0.62}As by 40%, and for antennas based on In{sub 0.53}Ga{sub 0.47}As by 64%.
- OSTI ID:
- 22756378
- Journal Information:
- Semiconductors, Vol. 51, Issue 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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