Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

Journal Article · Sat Apr 15 04:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617040170· OSTI ID:22649585

Khabibullin, R. A.; Yachmenev, A. E.; Maltsev, P. P. ^[1]; Grekhov, M. M. ^[2]; Ilyakov, I. E.; Shishkin, B. V.; Akhmedzhanov, R. A. ^[3]

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1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
2. National Research Nuclear University “MEPhI” (Russian Federation)
3. Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

• OSTI ID: 22649585
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEMBER EFFECT
EMISSION SPECTRA
EMISSION SPECTROSCOPY
ENERGY CONVERSION
ENERGY EFFICIENCY
EXCITATION
GALLIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
SUBSTRATES