Terahertz surface emission from Cu{sub 2}ZnSnSe{sub 4} thin film photovoltaic material excited by femtosecond laser pulses

Journal Article · Mon Dec 08 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903740· OSTI ID:22395441

Zhao, Zhenyu; Han, Qifeng; Zhang, Jingtao; Shi, Wangzhou ^[1]; Niehues, Gudrun; Funkner, Stefan; Yamamoto, Kohji; Tani, Masahiko ^[2]; Estacio, Elmer ^[2]; Guo, Qixin ^[1]

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1. Department of Physics, Shanghai Normal University, Shanghai 200234 (China)
2. Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

We observed efficient terahertz (THz) emission from sol-gel grown Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be independent of external magnetic fields. Comparing the polarity of THz emission waveforms of CZTSe and GaAs, we suggest that the acceleration of photo-carriers in the surface accumulation layer of CZTSe is the dominant mechanism of radiation emission. Optical excitation fluence dependence measurements show that the saturation fluence of the CZTSe thin film reaches 1.48 μJ/cm{sup 2}.

• OSTI ID: 22395441
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
COPPER COMPOUNDS
EMISSION SPECTRA
EMISSION SPECTROSCOPY
EXCITATION
GALLIUM ARSENIDES
LAYERS
MAGNETIC FIELDS
PHOTOVOLTAIC EFFECT
SOL-GEL PROCESS
SURFACES
THIN FILMS
THZ RANGE
TIN SELENIDES
WAVE FORMS
ZINC COMPOUNDS