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Fabrication of polycrystalline Cu{sub 2}ZnSnSe{sub 4} layers with strongly preferential grain orientation via selenization of Sn/Cu/ZnSe(001)/GaAs(001) structures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4866436· OSTI ID:22283099
; ; ; ; ;  [1]; ;  [2];  [3]
  1. Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)
  2. Laboratory for Electron Microscopy, KIT, Karlsruhe (Germany)
  3. Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, 70565 Stuttgart, Germany and Light Technology Institute, KIT, Karlsruhe (Germany)
We report on a simple approach for the fabrication of polycrystalline Cu{sub 2}ZnSnSe{sub 4} films on GaAs with strongly preferential grain orientation. Such layers are important for both fundamental spectroscopic investigations as well as studies of the impact of grain boundaries on the performance of solar cells. Cu{sub 2}ZnSnSe{sub 4} (CZTSe) layers were fabricated by growing a Sn/Cu/ZnSe(001) stack on a GaAs(001) substrate in a molecular-beam epitaxy system followed by selenization in a tube furnace. Raman spectroscopy as well as X-ray diffraction measurements combined with a microstructural investigation indicate the presence of the kesterite phase. Further, X-ray analysis such as rocking curves and ϕ-scans proves a preferential grain orientation of the obtained CZTSe films in all three dimensions.
OSTI ID:
22283099
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 104; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English