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Direct evidence of current blocking by ZnSe in Cu{sub 2}ZnSnSe{sub 4} solar cells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4706256· OSTI ID:22025532
; ; ;  [1]
  1. Department of Engineering Sciences, Division of Solid State Electronics, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)
Thin films of polycrystalline Cu{sub 2}ZnSnSe{sub 4} were made by selenization of co-sputtered metallic precursors and processed to solar cells. Electron beam induced current (EBIC) in combination with microscopic scale IV characterization is used to investigate lateral inhomogeneities in electrical performance across the solar cell area. Transmission electron microscopy relates areas with low EBIC response to the formation of a ZnSe phase at the absorber surface resulting in a current blocking behavior and a reduced short-circuit current density for the solar cells. Areas without ZnSe have a high EBIC response and result in high quality diodes well suited for solar cells.
OSTI ID:
22025532
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 100; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English