Electrical breakdown in thin oxides during bias-temperature ramps
Conference
·
OSTI ID:751183
- Sandia National Laboratories
Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp technique. No significant effect of radiation exposure on breakdown is observed for high quality thermal and nitrided oxides, up to 20 Mrad(SiO{sub 2}).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 751183
- Report Number(s):
- SAND2000-0364C
- Country of Publication:
- United States
- Language:
- English
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