Breakdown properties of irradiated MOS capacitors

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556843· OSTI ID:443029

Paccagnella, A; Candelori, A ^[1]; Milani, A; Formigoni, E ^[2]; Ghidini, G; Drera, D ^[3]; Pellizzer, F ^[1]; Fuochi, P G; Lavale, M ^[4]

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1. Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
2. Univ. di Padova (Italy). Dept. di Elettronica e Informatica
3. SGS-Thomson Microelectronics, Agrate Brianza (Italy)
4. CNR-FRAE, Bologna (Italy)

The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co{sup 60} gamma and 10{sup 14} neutrons/cm{sup 2} only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested.

• OSTI ID: 443029
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BREAKDOWN
CAPACITORS
ELECTRICAL PROPERTIES
ELECTRONS
GAMMA RADIATION
NEUTRONS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES