Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Residual charges effect on the annealing behavior of Co-60 irradiated MOS capacitors

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
DOI:https://doi.org/10.1109/23.12867· OSTI ID:6908134
; ; ;

It was experimentally observed that the residual charges of a MOS capacitor after C-V testing can exist for a long time. These residual charges induce a nonzero field at the SiO/sub 2//Si interface, and subsequently affect the annealing behavior due to a charge-temperature effect if the MOS capacitor is left floating during annealing. This problem is solved by a flat-band condition annealing method based on a charge-temperature technique. The annealing kinetics of a Co-60 irradiated MOS capacitor are then studied. A power law behavior of the annealing kinetics has been obtained for oxide charges annealed at 300/sup 0/C. Possible explanations are given for this observation.

Research Organization:
Dept. of Electrical Engineering, National Taiwan Univ., Taipei (TW)
OSTI ID:
6908134
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:1; ISSN IETNA
Country of Publication:
United States
Language:
English

Similar Records

Hole transport and charge relaxation in irradiated SiO$sub 2$ MOS capacitors
Conference · Sun Nov 30 23:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2163-2167 · OSTI ID:4083631
Charge yield and dose effects in MOS capacitors at 80 K
Conference · Tue Nov 30 23:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:7307263
Comparison of MOS capacitor and transistor postirradiation response
Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:7167322

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTION KINETICS
COBALT 60
COBALT ISOTOPES
ELECTRIC CHARGES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
HIGH TEMPERATURE
INTERFACES
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KINETICS
MATERIALS
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
REACTION KINETICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE EFFECTS
YEARS LIVING RADIOISOTOPES