A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe

Journal Article · Sun Aug 15 04:00:00 EDT 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.354652· OSTI ID:7368971

Pugh, J R; Mao, D; Zhang, J; Heben, M J; Nelson, A J; Frank, A J ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

A simple method for producing a Au:[ital p]-[ital n]-CdTe Schottky barrier is described. The shallow [ital p]-[ital n] junction is formed by photoelectrochemical surface oxidization of [ital n]-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the [ital p]-type layer. Current-voltage and capacitance-voltage measurements show that the thin [ital p]-layer enhances the effective barrier height relative to that of a traditional Au:[ital n]-CdTe junction. These results account for the Au:[ital p]-[ital n]-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:[ital n]-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:[ital p]-[ital n]-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7368971
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:4; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140505* -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
AUGER ELECTRON SPECTROSCOPY
CADMIUM TELLURIDE SOLAR CELLS
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELECTRON SPECTROSCOPY
ELEMENTS
EQUIPMENT
GOLD
JUNCTIONS
METALS
OXIDATION
P-N JUNCTIONS
PHOTOCHEMICAL REACTIONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOELECTRON SPECTROSCOPY
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS