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A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.354652· OSTI ID:7368971
; ; ; ; ;  [1]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

A simple method for producing a Au:[ital p]-[ital n]-CdTe Schottky barrier is described. The shallow [ital p]-[ital n] junction is formed by photoelectrochemical surface oxidization of [ital n]-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the [ital p]-type layer. Current-voltage and capacitance-voltage measurements show that the thin [ital p]-layer enhances the effective barrier height relative to that of a traditional Au:[ital n]-CdTe junction. These results account for the Au:[ital p]-[ital n]-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:[ital n]-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:[ital p]-[ital n]-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.

DOE Contract Number:
AC02-83CH10093
OSTI ID:
7368971
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:4; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English