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The n-silicon/thallium(III) oxide heterojunction photoelectrochemical solar cell

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2108662· OSTI ID:5509554

Thallium(III) oxide is a degenerate n-type semiconductor which can be electrochemically or photoelectrochemically deposited on conducting or semiconducting substrates. The material is highly conductive, transparent, and electrocatalytic. A photoelectrochemical cell consisting of the n-silicon/thallium(III) oxide photoanode and a platinum cathode in an alkaline solution of the ferrocyanide/ferricyanide redox couple produced a 0.512V open-circuit photovoltage, 33.5 mA/cm/sup 2/ short-circuit photocurrent density, 0.643 fill factor, and 13.8, photovoltaic efficiency with 80 mW/cm/sup 2/ iR-filtered xenon light. The efficiency was 11.0% with 75.3 mW/cm/sup 2/ natural sunlight, and 22.3% with 800 nm monochromatic light. The short-circuit quantum efficiency at 800 nm was 97%. A xenon photovoltaic efficiency of 10.2% was observed with cast multicrystalline n-silicon. Photocurrent-voltage curves were computer simulated using values of the barrier height (0.96V), diode quality factor (1.2), and series resistance (200..cap omega..) that were measured from dark current voltage and capacitance-voltage curves. A solid-state photovoltaic cell was fabricated by making a low-pressure point contact to the front surface of a dry photoanode. The photovoltaic characteristics of the solid-state cell were nearly identical with those of the photoelectrochemical cell. These results suggest that the photoelectrochemical cell functions like a Schottky-barrier or SIS solid-state photovoltaic cell in series with a highly reversible electrochemical cell.

Research Organization:
UNOCAL Corp., UNOCAL Science and Technology Div., Brea, CA 92621
OSTI ID:
5509554
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:4; ISSN JESOA
Country of Publication:
United States
Language:
English

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