Observation of the instability of Ti[sub x]Ga[sub y] alloys with respect to GaAs at elevated temperatures

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7368869

Kniffen, M L; Helms, C R ^[1]

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1. Stanford Univ., CA (United States)

The metallurgical reactions occurring at the Ti-GaAs interface between 600 and 850[degrees]C were examined using Auger depth profiling. Between 600 and 720[degrees]C titanium will react with gallium arsenide to form a uniform Ti[sub x]Ga[sub y]/TiAs/GaAs layered structure, similar to that which formed upon annealing Ti-GaAs contacts at much lower temperatures [J. Vac. Sci. Technol. A 5, 1511 (1987); J. Vac. Sci. Technol. A 6, 1473 (1988)]. However above 800[degrees]C the dominant reaction products are a titanium arsenide phase and liquid gallium. This result has significant implications for the development of thermally stable contacts to gallium arsenide using titanium-based metallizations. 14 refs., 2 figs.

• OSTI ID: 7368869
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 10:6; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
DATA
EXPERIMENTAL DATA
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
INTERFACES
INTERMETALLIC COMPOUNDS
METALLURGY
NUMERICAL DATA
PHASE STUDIES
PNICTIDES
STABILITY
TEMPERATURE DEPENDENCE
THERMAL DEGRADATION
TITANIUM ALLOYS