High-temperature stability of Nb/GaAs and NbN/GaAs interfaces

Journal Article · Mon Jan 11 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99074· OSTI ID:5529576

Ding, J; Lee, B; Gronsky, R; Washburn, J; Chin, D; Van Duzer, T

The interface stabilities of Nb/GaAs and NbN/GaAs contacts at temperatures up to 700 /sup 0/C for Nb/GaAs and 850 /sup 0/C for NbN/GaAs have been investigated by transmission electron microscopy and x-ray diffractometry techniques. Results reveal that a Nb/GaAs reaction takes place at temperatures above 600 /sup 0/C, and interdiffusion at the NbN/GaAs interface occurs at temperatures above 800 /sup 0/C. The correlation between the observed interface morphologies before and after annealing and previously reported electrical properties of these contacts is also discussed.

• Research Organization: Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5529576
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
COHERENT SCATTERING
DIFFRACTION
DIFFUSION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
METALS
MICROSCOPY
MORPHOLOGY
NEUTRAL-PARTICLE TRANSPORT
NIOBIUM
PNICTIDES
RADIATION TRANSPORT
SCATTERING
STABILITY
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION