High temperature stability of W/GaAs Schottky contacts: Structural and electrical studies

Technical Report · Sun Jun 01 04:00:00 EDT 1986

OSTI ID:6866412

Cheung, S K

W/GaAs Schottky diodes were fabricated and furnace-annealed in the temperature range 100 to 900/sup 0/C. The diodes were characterized by current-voltage (I-V) and capacitance-voltage (C-V) dependences, Rutherford Backscattering Spectrometry (RBS), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM). Deviations from ideal diode behavior were observed at annealing temperatures above 600/sup 0/C. Interdiffusion of W and GaAs was observed at 650/sup 0/C by RBS. Results strongly suggest that the electrical degradation of the diodes is correlated with the formation of a highly resistive layer near the W/GaAs interface. The high resistance of this layer may be attributed to the compensation of substrate dopants by the in-diffused W atoms. Annealing the diodes at temperatures above 850/sup 0/C resulted in reactions between W and GaAs. The W-GaAs reaction led to the formation of islands of W/sub 2/As/sub 3/ at the W/GaAs interface resulting in physical breakdown of the W/GaAs diode.

• Research Organization: California Univ., Berkeley (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6866412
• Report Number(s): LBL-22711; ON: DE87009178
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
METALS
MICROSCOPY
PNICTIDES
RUTHERFORD SCATTERING
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
STABILITY
TRANSISTORS
TRANSITION ELEMENTS
TUNGSTEN