Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thermal degradation mechanisms in GaAs solar cells with high-temperature contacts

Conference ·
OSTI ID:6707027
This objective of this work was to characterize the thermal stability of GaAs solar cells with high-temperature contacts. High-temperature stability is important for threat environments in space, for compatibility with high-temperature assembly techniques, and for enhanced reliability of cells. Our contact system, described previously, relies on a Pt solid-phase ohmic contact, a TiN barrier layer, and an Au conductor, with contact to a heavily doped p-GaAs contact layer. The behavior of both flat-plate and concentrator cells has been characterized as a function of temperature (400-600/degree/C) and time (5-15 minutes) of the anneal. We find that GaAs cells experience minimal electrical degradation up to 550/degree/C for 5 minutes, or to 490/degree/C for 15 minutes. Increases in the 2kT perimeter dark current are responsible for small decreases in Voc and FF up to these temperatures. At higher temperatures a drastic decrease in efficiency is caused by metallurgical reactions at isolated regions along the grid lines. The reaction, which appears to involve Au-Ga, is initiated at the edges of the grid lines. Away from edges, the contacts are metallurgically stable to at least 600/degree/C. 4 refs., 8 figs., 4 tabs.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Spire Corp., Bedford, MA (USA); Air Force Wright Aeronautical Labs., Wright-Patterson AFB, OH (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6707027
Report Number(s):
SAND-88-2498C; CONF-880965-20; ON: DE89001375
Country of Publication:
United States
Language:
English

Similar Records

Development of metallization for GaAs and AlGaAs concentrator solar cells
Technical Report · Tue Mar 31 23:00:00 EST 1987 · OSTI ID:6587144

Observation of the instability of Ti[sub x]Ga[sub y] alloys with respect to GaAs at elevated temperatures
Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) · OSTI ID:7368869

Annealing behavior of Au(Te)/n-GaAs contacts
Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:147001