High average power switching in diamond
- Lawrence Livermore National Lab., CA (United States)
- Old Dominion Univ., Norfolk, VA (United States)
Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300[degree]K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm[sup 2]/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/[degree]K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 7368634
- Report Number(s):
- UCRL-JC-109612; CONF-920671--16; ON: DE93015109
- Country of Publication:
- United States
- Language:
- English
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CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DEPOSITION
DIAMONDS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
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METALS
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N-TYPE CONDUCTORS
NONMETALS
PHOTOCONDUCTORS
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SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMICONDUCTOR SWITCHES
SEMIMETALS
SILICON
SURFACE COATING
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SWITCHING DIODES
TANTALUM
TRANSITION ELEMENTS