High average power switching in diamond
- Lawrence Livermore National Lab., CA (United States)
- Old Dominion Univ., Norfolk, VA (United States)
Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300{degree}K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm{sup 2}/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/{degree}K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 10162425
- Report Number(s):
- UCRL-JC--109612; CONF-920671--16; ON: DE93015109
- Country of Publication:
- United States
- Language:
- English
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