Role of oxygen in irradiated arsenic-doped silicon. [1. 5 MeV electrons]

Journal Article · Fri Oct 15 04:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89127· OSTI ID:7356884

Evwaraye, A O

Majority carrier traps produced in arsenic-doped silicon by 1.5-MeV electron irradiation are characterized by deep level transient spectroscopy. Four traps are observed including a new defect located at E/sub c/-0.30 eV. It is also observed that oxygen plays a vital role in the annealing mechanism of the arsenic-vacancy pair. This defect, with a level at E/sub c/-0.42 eV, has two annealing stages, the first being much faster than the second. Its first annealing stage cannot be explained by another defect superimposed upon the As-V pair.

• Research Organization: General Electric Corporate Research and Development, Schenectady, New York 12301
• OSTI ID: 7356884
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC
BEAMS
CRYOGENIC FLUIDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON BEAMS
ELEMENTS
ENERGY LEVELS
ENERGY RANGE
FLUIDS
HEAT TREATMENTS
IRRADIATION
JUNCTION DIODES
LEPTON BEAMS
MEV RANGE
MEV RANGE 01-10
NONMETALS
OXYGEN
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TRAPPING
TRAPS