Annealing of irradiation-induced defects in arsenic-doped silicon. [Electrons]

Journal Article · Sun May 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323935· OSTI ID:7305482

Evwaraye, A O

The annealing of the E3 (E/sub c/-0.30 eV) and E4 (E/sub c/-0.42 eV) defect levels in electron-irradiated arsenic-doped silicon has been studied by deep-level transient spectroscopy. The annealing studies of the E4 defect level in the diffused junctions indicate first-order kinetics with activation energies of 1.40 and 1.38 eV for the neutral and negative charge state of the defect, respectively. Even though the activation energies for thermal anneal at the two annealing modes are practically equal, charge state effects are operative. A secondary defect level E5 (E/sub c/-0.24 eV) appeared in the spectrum during the annealing of the diffused p/sup +/nn/sup +/ junctions. The growth of E1 (E/sub c/-0.17 eV) as the E4 defect anneals out seems to suggest that dissociation is the dominant process by which E4 is removed from the system.

• Research Organization: General Electric Corporate Research and Development, Schenectady, New York 12301
• OSTI ID: 7305482
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON BEAMS
ELEMENTS
ENERGY LEVELS
HEAT TREATMENTS
IRRADIATION
JUNCTION DIODES
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SPECTROSCOPY