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Thin-film CuInSe/sub 2//CdS heterojunction solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.89041· OSTI ID:7345966
The fabrication procedures and characteristics of several thin-film p-CuInSe/sub 2//n-CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe/sub 2/ or through CdS) are discussed. Efficiencies in the range of 4--5% are reported, under 100 mW/cm/sup 2/ tungsten-halogen illumination for 1.2-cm/sup 2/ devices. Included are the spectral response and J-V characteristics for these photovoltaic junctions. (AIP)
Research Organization:
Department of Electrical Engineering, University of Maine, Orono, Maine 04473
OSTI ID:
7345966
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:4; ISSN APPLA
Country of Publication:
United States
Language:
English

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