Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thin film Cds/CuinSe/sub 2/ heterojunction solar cell

Journal Article · · Proc. Soc. Photo-Opt. Instrum. Eng.; (United States)
OSTI ID:5321586
The development of a polycrystalline, thin-film solar cell utilizing a heterojunction structure based upon N-type CdS and P-type CuInSe/sub 2/ semiconductor materials is described. The cell, prepared entirely by vacuum deposition and sputtering techniques onto inexpensive substrates, has potential applications as a low-cost mass produced device for photovoltaic power generation systems. A device efficiency of 7.5% under simulated AM-1 illumination is reported. Material and device properties pertinent to the development of the high efficiency cell are reviewed. The electrical, optical, and structural properties of the deposited thin-film materials are described. Results of detailed cell characterization using a variety of electrical, optical, and thermal measurements are presented and analyzed in terms of a photovoltaic cell model dominated by interface state recombinations. Finally, the projected, realistically achievable performance of this thin-film cell is discussed. 11 refs.
Research Organization:
Boeing Aerosp Co, Seattle, Wash, USA
OSTI ID:
5321586
Report Number(s):
CONF-800719-
Journal Information:
Proc. Soc. Photo-Opt. Instrum. Eng.; (United States), Journal Name: Proc. Soc. Photo-Opt. Instrum. Eng.; (United States) Vol. 248; ISSN SPIEC
Country of Publication:
United States
Language:
English