Oxide thickness dependence of high-energy-electron-, VUV-, and corona-induced charge in MOS capacitors
The radiation-induced flatband voltage shift of MOS capacitors using dry-O/sub 2/-grown SiO/sub 2/ is shown to vary as the square of oxide thickness for penetrating 1-MeV electron radiation and linearly with oxide thickness for nonpenetrating 10.2-eV photon radiation. Corona discharge experiments on unmetallized portions of the same oxidized silicon wafers also show a flatband voltage shift linearly dependent upon oxide thickness. These experiments provide strong evidence to support a simple generation, transport, and trapping model for radiation charging of SiO/sub 2/. The results also show that for dry oxides the density of trapped holes near the Si-SiO/sub 2/ interface is indepenent of oxidation time. (AIP)
- Research Organization:
- RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey 08540
- OSTI ID:
- 7345605
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAMS
CAPACITORS
CHALCOGENIDES
CORONA DISCHARGES
ELECTRIC DISCHARGES
ELECTRICAL EQUIPMENT
ELECTRON BEAMS
ELEMENTS
ENERGY RANGE
EQUIPMENT
INTERFACES
LEPTON BEAMS
MEV RANGE
MEV RANGE 01-10
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRAPPING