Viscous shear flow model for MOS device radiation sensitivity
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7213063
A model is presented which relates MOS processing steps and design parameters to the ionizing radiation sensitivity of hardened MOS devices. The model is based on combining the viscous properties of SiO/sub 2/ at typical processing temperatures with stresses arising in the SiO/sub 2/ on Si system during oxidation and subsequent high-temperature cycles. The model explains the recently observed dependence of radiation-induced flatband voltage shifts upon SiO/sub 2/ thickness cubed. Quantitative comparison with experiment is obtained for the relations of flatband voltage shift on post-oxidation annealing temperature and on oxide growth temperature. Several processing changes to further harden both dry and wet oxides are suggested by the model.
- Research Organization:
- Sandia Labs., Albuquerque, NM
- OSTI ID:
- 7213063
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
FABRICATION
FLOW MODELS
FLUID FLOW
HARDENING
HOLES
MATHEMATICAL MODELS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
SHEAR
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPS
VISCOUS FLOW
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
FABRICATION
FLOW MODELS
FLUID FLOW
HARDENING
HOLES
MATHEMATICAL MODELS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
SHEAR
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPS
VISCOUS FLOW