MOS hardness characterization and its dependence upon some process and measurement variables
The effects of oxidation time (or oxide thickness) on the hardness of 1000/sup 0/C dry oxides on silicon is shown to result in a post-irradiation flatband voltage shift (..delta..V/sub FB/) that is proportional to oxide thickness squared (d/sup 2//sub ox/) for high energy irradiation and ..delta..V/sub FB/ varies as d/sub ox/ for vacuum ultraviolet (VUV) radiation and negative corona charging. This is in disagreement with previously reported work in which ..delta..V/sub FB/ varies as d/sup 3//sub ox/ was measured for high energy irradiation. The present experiments strongly suggest that hole traps are located mainly at the Si-SiO/sub 2/ interface and have a total area density that is independent of oxidation time or oxide thickness at a constant oxidation temperature. Trace amounts of water were added to the oxidation ambient of a modified hard-oxide furnace tube in levels ranging from 16 parts per million (ppm) to 50,000 ppm. The results of these experiments show that trace levels of water do not significantly degrade the radiation hardness of dry oxides.
- Research Organization:
- RCA Labs., Princeton, NJ
- OSTI ID:
- 7307253
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHEMICAL REACTIONS
DIMENSIONS
ELEMENTS
FABRICATION
HARDENING
HOLES
INTERFACES
MOS TRANSISTORS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
THICKNESS
TRANSISTORS
TRAPS