Chemically-trapped hydrogen in CVD Si/sub 3/N/sub 4/: dependence on NH/sub 3//SiH/sub 4/ ratio and on annealing. [H and D implants at 20 keV]

Conference · Thu Jan 01 00:00:00 EST 1976

OSTI ID:7336783

Stein, H J; Wegener, H A.R.

Internal reflectance measurements were used to determine the hydrogen content in as-deposited, thermally annealed, and in hydrogen and deuterium implanted CVD silicon-nitride films. The deposition parameters were 700/sup 0/C, 150 A/min, argon carrier gas, and NH/sub 3//SiH/sub 4/ ratios of 10:1, 1000:1, and 1000:1. Hydrogen is bound both to nitrogen and to silicon. The NH band increases with the NH/sub 3//SiH/sub 4/ ratio, whereas the SiH band is a maximum in the 100:1 film. Conductance and refractive index of the films decrease with increasing NH/sub 3//SiH/sub 4/ ratio. Rapid initial annealing of the NH band is observed at 800/sup 0/C, whereas the SiH band intensity is maintained in 10:1 and 100:1 films but not in the 1000:1 film. This behavior is interpreted as a transfer of hydrogen from N to Si sites. It is suggested that the hydrogen content is hydrogen-limited in the 10:1 and 100:1 depositions and site-limited in the 1000:1 deposition. Hydrogen implantation provides a calibration which indicates approximately 7 at. percent hydrogen in the as-deposited 1000:1 film. Implanted deuterium gives the expected vibrational frequency shift for the absorption band but does not give a mass-dependent shift in annealing for the major loss stage near 900/sup 0/C, suggesting a bond-energy-limited rather than diffusion-limited hydrogen-loss mechanism. 10 fig.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: E(29-1)-789
• OSTI ID: 7336783
• Report Number(s): SAND-76-5357; CONF-760851-1
• Resource Relation: Conference: IEEE non-volatile semiconductor memory workshop, Vail, CO, USA, 17 Aug 1976
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
ION IMPLANTATION
ANNEALING
CHEMICAL VAPOR DEPOSITION
DEUTERIUM
DEUTERONS
ELECTRIC CONDUCTIVITY
FILMS
HYDROGEN
HYDROGEN IONS 1 PLUS
REFLECTION
REFRACTIVITY
SPECTRAL SHIFT
TRAPPING
CATIONS
CHARGED PARTICLES
CHEMICAL COATING
CRYOGENIC FLUIDS
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
FLUIDS
HEAT TREATMENTS
HYDROGEN IONS
HYDROGEN ISOTOPES
IONS
ISOTOPES
LIGHT NUCLEI
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SILICON COMPOUNDS
STABLE ISOTOPES
SURFACE COATING
360206* - Ceramics
Cermets
& Refractories- Radiation Effects