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Chemically bound hydrogen in CVD Si/sub 3/N/sub 4/: dependence on NH/sub 3//SiH/sub 4/ ratio and on annealing

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2133451· OSTI ID:7100580

The effects of the ammonia-to-silane ratio, R, during deposition and of postdeposition heating on chemically bound H in 1000A silicon nitride films were investigated by using miltiple internal reflection (MIR) spectroscopy. The films were deposited at 700/sup 0/C with R equal to 10:1, 100:1, and 1000:1 in an Ar carrier gas. Vibrational modes for N-H and Si-H bonded centers show that H is incorporated into the films. The sum of the NH and SiH band intensities (total bound H) increased with R. The SiH band intensity, however, was largest in the 100:1 film. The increase in bound H with R is attributed to an increase in reactive H from NH/sub 3/ decomposition in the presence of incompletely bonded Si and N. The decrease in SiH centers when R is increased from 100:1 to 1000:1 is attributed to more complete Si-N bonding. Annealing behavior at 800/sup 0/C suggests an initial transfer of H from N-H to Si-H bonds in 10:1 and 100:1 films consistent with the presence of incompletely bonded Si. Bonding of implanted H in Si/sub 3/N/sub 4/ was demonstrated by isotopic substitution of D for H, and a calibration to determine H concentrations from MIR measurements was obtained. Bond energy-limited H loss is suggested to explain an observed mass-independent annealing for implantation-produced NH and ND centers. 9 figures.

OSTI ID:
7100580
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 124:6; ISSN JESOA
Country of Publication:
United States
Language:
English