Chemically-trapped hydrogen in CVD Si/sub 3/N/sub 4/: dependence on NH/sub 3//SiH/sub 4/ ratio and on annealing. [H and D implants at 20 keV]
Internal reflectance measurements were used to determine the hydrogen content in as-deposited, thermally annealed, and in hydrogen and deuterium implanted CVD silicon-nitride films. The deposition parameters were 700/sup 0/C, 150 A/min, argon carrier gas, and NH/sub 3//SiH/sub 4/ ratios of 10:1, 1000:1, and 1000:1. Hydrogen is bound both to nitrogen and to silicon. The NH band increases with the NH/sub 3//SiH/sub 4/ ratio, whereas the SiH band is a maximum in the 100:1 film. Conductance and refractive index of the films decrease with increasing NH/sub 3//SiH/sub 4/ ratio. Rapid initial annealing of the NH band is observed at 800/sup 0/C, whereas the SiH band intensity is maintained in 10:1 and 100:1 films but not in the 1000:1 film. This behavior is interpreted as a transfer of hydrogen from N to Si sites. It is suggested that the hydrogen content is hydrogen-limited in the 10:1 and 100:1 depositions and site-limited in the 1000:1 deposition. Hydrogen implantation provides a calibration which indicates approximately 7 at. percent hydrogen in the as-deposited 1000:1 film. Implanted deuterium gives the expected vibrational frequency shift for the absorption band but does not give a mass-dependent shift in annealing for the major loss stage near 900/sup 0/C, suggesting a bond-energy-limited rather than diffusion-limited hydrogen-loss mechanism. 10 fig.
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- E(29-1)-789
- OSTI ID:
- 7336783
- Report Number(s):
- SAND-76-5357; CONF-760851-1
- Country of Publication:
- United States
- Language:
- English
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360206* -- Ceramics
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ANNEALING
CATIONS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYOGENIC FLUIDS
DEPOSITION
DEUTERIUM
DEUTERONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
FLUIDS
HEAT TREATMENTS
HYDROGEN
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
HYDROGEN ISOTOPES
ION IMPLANTATION
IONS
ISOTOPES
LIGHT NUCLEI
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
REFRACTIVITY
SILICON COMPOUNDS
SILICON NITRIDES
SPECTRAL SHIFT
STABLE ISOTOPES
SURFACE COATING
TRAPPING