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Preparation and characteristics of CuGaSe/sub 2//CdS solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.89307· OSTI ID:7333098
p-CuGaSe/sub 2//n-CdS heterojunctions have been prepared by depositing CdS films on p-type CuGaSe/sub 2/ single crystals whose initial resistivity was 10/sup -2/ ..cap omega.. cm and changed to 1 ..cap omega.. cm after the CdS film deposition. The CdS films, which were grown by a multisources method, exhibit a room-temperature resistivity of 0.1 ..cap omega.. cm. The absolute quantum efficiency of these devices as photovoltaic detectors reaches the value of 80% at a wavelength of 5800 A. As solar cells, these heterojunctions at 25 degreeC display a solar power conversion efficiency of 5% when they are exposed to the solar light whose intensity is 71 mW/cm/sup 2/. When the heterojunctions are directly polarized, they emit light in a broad band which is centered at approx.7700 A. An external electroluminescent emission efficiency of about 0.05% has been measured at liquid-nitrogen temperature. (AIP)
Research Organization:
Istituto di Fisica, C.N.R.-G.N.S.M., Parma, Italy
OSTI ID:
7333098
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:2; ISSN APPLA
Country of Publication:
United States
Language:
English