Low-resistivity ZnCdS films for use as windows in heterojunction solar cells

Journal Article · Thu Jun 15 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89923· OSTI ID:5025848

Romeo, N; Sberveglieri, G; Tarricone, L

Low-resistivity Zn/sub x/Cd/sub 1-x/S films have been obtained by a multisource evaporation method. The films have been doped with In during the deposition. The resistivity of such films varies from 2 x 10/sup -3/ ..cap omega.. cm for x=0 up to 2 ..cap omega.. cm for x=0.3 and rises up to 10/sup 12/ ..cap omega.. cm for x=1. For energies lower than the energy gap, the transparency of these films, when corrected for the reflection loss, can reach a value of almost 100%. In the range of an x variation between 0 and 0.4 these films, because of their low resistivity and their high transparency, can be used as windows in heterojunction solar cells.

• Research Organization: Istituto di Fisica, C.N.R., G.N.S.M., Parma, Italy
• OSTI ID: 5025848
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
FILMS
INDIUM
INORGANIC PHOSPHORS
JUNCTION DIODES
LIGHT TRANSMISSION
METALS
OPACITY
OPTICAL PROPERTIES
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
ZINC SULFIDES