Photovoltaic effect in Cu/CuGaSe/sub 2/ Schottky barriers

Journal Article · Sun Jul 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90935· OSTI ID:6051254

Stankiewicz, J; Giriat, W

Cu/CuGaSe/sub 2/ Schottky barriers have been prepared by vacuum deposition of copper on p-type CuGaSe/sub 2/ single crystals with a resistivity of 10/sup -2/ ..cap omega.. cm. The photovoltaic properties of such cells have been investigated. Under the AM1 condition these cells exhibit a solar-energy conversion efficiency of 3.5%.

• Research Organization: Instituto Venezolano de Investigaciones Cientificas, Apartado 1827, Caracas, Venezuela
• OSTI ID: 6051254
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
CONVERSION
COPPER
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY CONVERSION
ENERGY GAP
GALLIUM COMPOUNDS
GALLIUM SELENIDES
HALL EFFECT
HOLES
MEDIUM TEMPERATURE
METALS
MOBILITY
MONOCRYSTALS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
SCHOTTKY BARRIER DIODES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SOLAR ENERGY CONVERSION
SUBSTRATES
TRANSITION ELEMENTS