Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

Conference · Fri Oct 01 00:00:00 EDT 1976

OSTI ID:7330740

Hansen, W L; Haller, E E

Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400/sup 0/C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.

• Research Organization: California Univ., Berkeley (USA). Lawrence Berkeley Lab.
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7330740
• Report Number(s): LBL-5564; CONF-761006-33; TRN: 77-006425
• Resource Relation: Conference: Nuclear science, scintillation and semiconductor counter symposium, New Orleans, LA, USA, 20 Oct 1976
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
GERMANIUM
CRYSTALLIZATION
ELECTRIC CONTACTS
HIGH-PURITY GE DETECTORS
AMORPHOUS STATE
ELECTRONS
EPITAXY
EVAPORATION
HOLES
N-TYPE CONDUCTORS
SEMICONDUCTOR DIODES
SOLIDS
SURFACES
ELECTRICAL EQUIPMENT
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
GE SEMICONDUCTOR DETECTORS
LEPTONS
MEASURING INSTRUMENTS
METALS
PHASE TRANSFORMATIONS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
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