Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7307398
Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 673K. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.
Research Organization:
Univ. of California, Berkeley
OSTI ID:
7307398
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:1
Country of Publication:
United States
Language:
English