Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7307398
Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 673K. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.
- Research Organization:
- Univ. of California, Berkeley
- OSTI ID:
- 7307398
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL GROWTH
CURRENTS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
GE SEMICONDUCTOR DETECTORS
GERMANIUM
HIGH-PURITY GE DETECTORS
LEAKAGE CURRENT
MEASURING INSTRUMENTS
METALS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL GROWTH
CURRENTS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
GE SEMICONDUCTOR DETECTORS
GERMANIUM
HIGH-PURITY GE DETECTORS
LEAKAGE CURRENT
MEASURING INSTRUMENTS
METALS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS