Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

Conference · Tue Feb 01 00:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7307398

Hansen, W L; Haller, E E

Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 673K. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.

• Research Organization: Univ. of California, Berkeley
• OSTI ID: 7307398
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-24:1; Conference: 23. nuclear science symposium, New Orleans, LA, USA, 20 Oct 1976
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HIGH-PURITY GE DETECTORS
ELECTRIC CONTACTS
CRYSTAL GROWTH
EPITAXY
FABRICATION
GERMANIUM
LEAKAGE CURRENT
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GE SEMICONDUCTOR DETECTORS
MEASURING INSTRUMENTS
METALS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments