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Title: Amorphous Ge bipolar blocking contacts on Ge detectors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:7139696

This paper reports on electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals, both n- and p-type, were found to exhibit good blocking behavior with low leakage currents, with the contact biased under either voltage polarity. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. The use of such contacts allows fabrication of multielectrode detectors by means of simple processing steps.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
7139696
Report Number(s):
CONF-911106-; CODEN: IETNAE
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 39:4; Conference: 1991 Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Santa Fe, NM (United States), 2-9 Nov 1991; ISSN 0018-9499
Country of Publication:
United States
Language:
English