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Defect-impurity interactions in irradiated germanium. [/sup 60/Co. gamma. rays, 1. 5 to 2 MeV electrons, thermal neutrons]

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
The purpose of these experiments was to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, less than or equal to 10/sup 15/ to greater than or equal to 10/sup 17/ oxygen cm/sup -3/ was added to the furnace chamber after approximately /sup 1///sub 3/ of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77/sup 0/K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 ..mu..) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300/sup 0/K with /sup 60/Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy-oxygen, lithium-oxygen, and lithium-vacancy interactions. A tentative model was developed for the lattice defect and defect-impurity structures; however, it was evident that any interpretation of defect-impurity interactions as a consequence of irradiation or annealing was subject to considerable error if the concentration and electrical role of certain impurities was not determined.
Research Organization:
Oak Ridge National Lab., TN
OSTI ID:
7326541
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-22:6; ISSN IETNA
Country of Publication:
United States
Language:
English