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Progress toward a practical Nb--Ge conductor

Conference ·
OSTI ID:7324898
Properties of high-T/sub c/ Nb--Ge films deposited by sputtering and by chemical vapor deposition (CVD) have been investigated. Results of sputtering in the presence of controlled levels of O/sub 2/, N/sub 2/, Si, and of reactive sputtering in Ar--GeH/sub 4/, suggest that the high-T/sub c/ A15 phase is impurity- or defect-stabilized. In CVD deposits two tetragonal modifications were found: sigma and T2, the latter probably stabilized by Cl/sub 2/. High critical current densities, J/sub c/ (H, T) of fine-grained sputtered films are attributed to flux pinning on A15 grain boundaries. In coarse-grained CVD films high self-field J/sub c/'s, 10/sup 6/ to 10/sup 7/ A cm/sup -2/ at T = 4.2/sup 0/K, are attributed to pinning on dispersed sigma-phase. Comparably high J/sub c/'s were also obtained in CVD A15 films doped with impurities. Low field ac losses p (H, T) were correlated with J/sub c/ and coating geometries. The feasibility of fabricating multifilamentary composite conductors by CVD was demonstrated experimentally and a fabrication process for long Nb/sub 3/Ge CVD tapes is being developed.
Research Organization:
Westinghouse Research Labs., Pittsburgh, PA (USA)
OSTI ID:
7324898
Report Number(s):
COO-2522-6; CONF-760829-45
Country of Publication:
United States
Language:
English

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