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Critical current density and flux pinning in Nb/sub 3/Ge

Conference · · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)
OSTI ID:7230913
High self-field critical current densities, J/sub c/, of the order of 10/sup 6/ A/cm/sup 2/ between 4 and 14/sup 0/K have been reported for chemical vapor deposited (CVD) films of Nb/sub 3/Ge. Results of J/sub c/ measurements in a wide field range and film composition analyses suggest that high values of J/sub c/ are due primarily to flux pinning on dispersed tetragonal (sigma) phase. Single phase (A15) Nb/sub 3/Ge samples exhibited lower J/sub c/ of the order of 10/sup 4/ to 10/sup 5/ A/cm/sup 2/. The ac loss measurements corroborate the proposed interpretation.
Research Organization:
Westinghouse Research Labs., Pittsburgh
OSTI ID:
7230913
Conference Information:
Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 34
Country of Publication:
United States
Language:
English