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Impurity doping of chemical-vapor-deposited Nb/sub 3/Ge and its effect on critical-current density

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.324652· OSTI ID:5143025
In an earlier work, we demonstrated that high self-field and low-field critical-current densitites J/sub c/ of the order of 10/sup 6/ A cm/sup -2/ can be attributed to flux pinning on a dispersed Nb/sub 5/Ge/sub 3/ tetragonal phase present in Nb/sub 3/Ge/sub 3/ layers grown by chemical-vapor deposition (CVD). In this study, we examined the effect of impurity gas additions on J/sub c/ and the critical temperature T/sub c/ of the A15 superconducting phase. The gas impurities were N/sub 2/, C/sub 2/H/sub 6/, and CO/sub 2/. The impurity concentration in the gas phase was varied over three to four orders of magnitude to establish tradeoffs between T/sub c/ deterioration and J/sub c/ enhancement. The x-ray phase analysis of samples containing the highest impurity concentrations indicated by the presence of niobium nitrides and carbides, respectively. The T/sub c/ was affected least by N/sub 2/ and most by CO/sub 2/ additions. Doping by N/sub 2/ or C/sub 2/H/sub 6/ resulted in A15 deposits free of the tetragonal phase and having J/sub c/'s of the order of 10/sup 6/ A cm/sup -2/, comparable to the best Nb/sub 5/Ge/sub 3/-containing samples. The grain size of deposits was estimated from thinned specimens using transmission electron microscopy. Correlation of J/sub c/ with the microstructure of the sample suggested that predominant flux pinning occurs on impurities incorporated in Nb-Ge layers and on the accompanying defects.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
OSTI ID:
5143025
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:2; ISSN JAPIA
Country of Publication:
United States
Language:
English

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