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Growth and characterization of thin-film compound semiconductor photovoltaic heterojunctions

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.569173· OSTI ID:7320487

The fabrication and characteristics of several vacuum-deposited photovoltaic heterojunctions involving ternary compounds (CuInSe/sub 2/, CuInS/sub 2/, and CuInTe/sub 2/) and a binary compound (InP) with Cds are described. The light and dark IV characteristics, spectral response data, and cell parameters (fill factors, open-circuit voltages, short circuit currents, efficiencies) are reported for the thin-film solar cells.

Research Organization:
Department of Electrical Engineering, University of Maine at Orono, Orono, Maine 04473
OSTI ID:
7320487
Journal Information:
J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 14:1; ISSN JVSTA
Country of Publication:
United States
Language:
English