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Multiple-target method for sputtering amorphous films for bubble-domain devices

Conference · · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)
OSTI ID:7317832

Previously, sputtered amorphous metal alloys for bubble applications have ordinarily been prepared by standard sputtering techniques using a single target electrode. The deposition of these alloys is reported using a multiple target rf technique in which a separate target is used for each element contained in the alloy. One of the main advantages of this multiple-target approach is that the film composition can be easily changed by simply varying the voltages applied to the elemental targets. In the apparatus, the centers of the targets are positioned on a 15 cm-radius circle. The platform holding the film substrate is on a 15 cm-long arm which can rotate about the center, thus bringing the sample successively under each target. The platform rotation rate is adjustable from 0 to 190 rpm. That this latter speed is sufficient to homogenize the alloys produced is demonstrated by measurements made of the uniaxial anisotropy constant in Gd/sub 0/./sub 12/Co/sub 0/./sub 59/Cu/sub 0/./sub 29/ films. The anisotropy is 6.0 x 10/sup 5/ ergs/cm/sup 3/ and independent of rotation rate above approximately 25 rpm, but it drops rapidly for slower rotation rates, reaching 1.8 x 10/sup 5/ ergs/cm/sup 3/ for 7 rpm. The film quality is equal to that of films made by conventional methods. Coercivities of a few oersteds in samples with stripe widths of 1 to 2 ..mu..m and magnetizations of 800 to 2800 G were observed.

Research Organization:
Sperry Research Center, Sudbury, MA
OSTI ID:
7317832
Journal Information:
AIP (Am. Inst. Phys.) Conf. Proc.; (United States), Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Vol. 34; ISSN APCPC
Country of Publication:
United States
Language:
English

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