Formation of CoNbZr films by a dc opposing-target sputtering method

Journal Article · Mon Oct 06 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97530· OSTI ID:5193269

Miura, M; Tanaka, K; Itegami, H

CoNbZr films were prepared using dc opposing-target sputtering equipment. It was investigated as to how the sputtering gas pressure influences the characteristics of the films under the condition of constant deposition rate. The saturation flux density and crystallization temperature were almost constant and independent of the sputtering gas pressure. Their values were 0.83 +- 0.03 T and 562 +- 1 /sup 0/C. However, the anisotropy field, coercive force, and morphology of the films were significantly affected by the sputtering gas pressure.

• Research Organization: Consumer Products Research Center, Hitachi Ltd., 292, Yoshida-machi, Totsuka-ku, Yokohama 244, Japan
• OSTI ID: 5193269
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
COBALT ALLOYS
CRYSTALLIZATION
FABRICATION
FILMS
FLUX DENSITY
MAGNETIC PROPERTIES
MORPHOLOGY
NIOBIUM ALLOYS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PRESSURE EFFECTS
SATURATION
SPUTTERING
THIN FILMS
ZIRCONIUM ALLOYS