Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Annealing behavior of magnetic anisotropy in CoNbZr films

Journal Article · · IEEE Trans. Magn.; (United States)
DOI:https://doi.org/10.1109/20.3430· OSTI ID:6050753

It was investigated how magnetic and nonmagnetic annealing influences the magnetic anisotropy in CoNbZr films formed by a dc opposing-targets sputtering method. It was revealed that the origin of the magnetic anisotropy is the directional ordering of the magnetic atoms. The anisotropy fields and the direction of the easy axis obtained when the films are annealed in zero magnetic field are almost the same as those for the magnetic field parallel to the easy axis of the as-deposited films. The activation energy of the as-deposited film is 0.86 eV. Annealing the film increases the activation energy which is 2.1 eV when the film is annealed at a temperature of 450/sup 0/C for 2 h.

Research Organization:
Consumer Products Research Center, Hitachi Ltd., Totsuku-ku, Yokohama (JP); Tokai Works, Hitachi Ltd., Katsutashi, Ibaragi-ken (JP)
OSTI ID:
6050753
Journal Information:
IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 24:5; ISSN IEMGA
Country of Publication:
United States
Language:
English