Domain wall pinning and hysteresis losses in amorphous CoNbZr films

Conference · Mon Nov 01 04:00:00 EST 1993 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6837328

Rouabhi, M; Guyot, M; Cagan, V; Krishnan, R ^[1]

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1. CNRS, Meudon (France). Lab. de Magnetisme et Materiaux Magnetiques

In a series of CoNbZr amorphous films prepared by R.F. sputtering, with thickness t ranging from 86 to 480 nm, the authors show that the domain wall (DW) motion is the dominant magnetization mechanism in the irreversible processes when the magnetic field is applied along the in-plane easy axis. A simple model, assuming a DW pinning at the film surfaces, explains the existence of a critical unpinning field (as well as hysteresis losses) inversely proportional to the film thickness. Frequency effects on loop parameters are reported up to 100 kHz.

• OSTI ID: 6837328
• Report Number(s): CONF-930416--
• Conference Information: Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 29:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
AMORPHOUS STATE
COBALT ALLOYS
COBALT BASE ALLOYS
DATA
DOMAIN STRUCTURE
EXPERIMENTAL DATA
HYSTERESIS
INFORMATION
MAGNETIC PROPERTIES
MAGNETIC SUSCEPTIBILITY
NIOBIUM ALLOYS
NUMERICAL DATA
PHYSICAL PROPERTIES
ZIRCONIUM ALLOYS