Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Transient radiation effects in CCD's

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7307280

The response of Charge Coupled Device (CCD) linear shift registers to transient ionizing radiation has been evaluated. Dose rates from 6 x 10/sup 4/ to 1 x 10/sup 7/ rads (Si)/sec were used to deliver between .06 and 20 rads per pulse. The measurement techniques used and the response of the CCD register to these exposures is described. The recovery of the CCD to normal operation and the dependence on dose, dose rate and clock frequency is discussed with particular emphasis on the time dependence and mechanism of the device recovery. The practical limitations on CCD applications in an ionizing radiation environment are discussed.

Research Organization:
Rome Air Development Center, Hanscom AFB, MA
OSTI ID:
7307280
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:6; ISSN IETNA
Country of Publication:
United States
Language:
English

Similar Records

Characteristics of CMOS/bulk and SOS memories in a transient environment
Conference · Wed Nov 30 23:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:6545765

Radiation hardened p-surface channel CCD's
Conference · Tue Nov 30 23:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:7256743

Low-temperature radiation damage effects in a room-temperature radiation-hard surface channel CCD
Conference · Wed Nov 30 23:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:6545804